Frequency-domain Characterization of Reverse Recovery Charge (QRR) in Commercial 1N4003 pn-Silicon Diodes
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Abstract
The reverse recovery charge (QRR) of silicon pn diodes is traditionally characterized in the time domain. In many technological applications—especially rectification of audio- and RF-range alternating currents—the frequency-domain manifestation of QRR is more relevant. We present a simple, analog frequency-sweep measurement method that reveals QRR-related limitations of rectification efficiency in real time. Using a sinusoidal excitation and oscilloscope frequency-axis mapping, we investigate the frequency ft at which the magnitude of the reverse current equals half that of the forward current. Measurements of 359 nominally identical 1N4003 diodes show a large spread in both forward voltage at 1,1 mA and ft , despite belonging to the same production batch. A Schottky diode reference (1N5711) shows no measurable reverse AC conduction within the tested range, confirming the method’s validity. The approach provides a rapid and didactic alternative to conventional time-domain QRR measurements.
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Copyright (c) 2025 Wieck MR, et al.
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